Journals > > Topics > Silicon Photonics
Silicon Photonics|127 Article(s)
On-chip ultra-high rejection and narrow bandwidth filter based on coherency-broken cascaded cladding-modulated gratings
Jinzhao Wang, Ting Li, Yang Feng, Jiewen Li, Wanxin Li, Luwei Ding, Yong Yao, Jianan Duan, Wei Liu, Feng He, Yi Zou, and Xiaochuan Xu
Bragg filters are of essential importance for chip-scale photonic systems. However, the implementation of filters with sub-nanometer bandwidth and rejection beyond 70 dB is hindered by the high index contrast of the silicon-on-insulator platform, which makes filters prone to fabrication imperfections. In this paper, we propose to combine coherency-broken cascading architecture and cladding modulation to circumvent the intrinsic limitation. The cascading architecture effectively prevents the accumulation of phase errors, while the cladding modulation offers additional design freedom to reduce the coupling coefficient. A bimodal Bragg filter with a testing-equipment-limited rejection level of 74 dB and a 40 dB bandwidth of 0.44 nm is experimentally demonstrated. The minimum feature size is 90 nm, which significantly relieves the fabrication constraints. Bragg filters are of essential importance for chip-scale photonic systems. However, the implementation of filters with sub-nanometer bandwidth and rejection beyond 70 dB is hindered by the high index contrast of the silicon-on-insulator platform, which makes filters prone to fabrication imperfections. In this paper, we propose to combine coherency-broken cascading architecture and cladding modulation to circumvent the intrinsic limitation. The cascading architecture effectively prevents the accumulation of phase errors, while the cladding modulation offers additional design freedom to reduce the coupling coefficient. A bimodal Bragg filter with a testing-equipment-limited rejection level of 74 dB and a 40 dB bandwidth of 0.44 nm is experimentally demonstrated. The minimum feature size is 90 nm, which significantly relieves the fabrication constraints.
Photonics Research
- Publication Date: May. 01, 2024
- Vol. 12, Issue 5, 979 (2024)
Silicon-based optical phased array with a reconfigurable aperture for “gaze” scanning of LiDAR
Heming Hu, Yafang He, Baisong Chen, Ziming Wang, Yingzhi Li, Qijie Xie, Quanxin Na, Zihao Zhi, Xuetong Li, Huan Qu, Patrick Lo, and Junfeng Song
Light detection and ranging (LiDAR) serves as one of the key components in the fields of autonomous driving, surveying mapping, and environment detection. Conventionally, dense points clouds are pursued by LiDAR systems to provide high-definition 3D images. However, the LiDAR is typically used to produce abundant yet redundant data for scanning the homogeneous background of scenes, resulting in power waste and excessive processing time. Hence, it is highly desirable for a LiDAR system to “gaze” at the target of interest by dense scanning and rough sparse scans on the uninteresting areas. Here, we propose a LiDAR structure based on an optical phased array (OPA) with reconfigurable apertures to achieve such a gaze scanning function. By virtue of the cascaded optical switch integrated on the OPA chip, a 64-, 128-, 192-, or 256-channel antenna can be selected discretionarily to construct an aperture with variable size. The corresponding divergence angles for the far-field beam are 0.32°, 0.15°, 0.10°, and 0.08°, respectively. The reconfigurable-aperture OPA enables the LiDAR system to perform rough scans via the large beam spots prior to fine scans of the target by using the tiny beam spots. In this way, the OPA-based LiDAR can perform the “gaze” function and achieve full-range scanning efficiently. The scanning time and power consumption can be reduced by 1/4 while precise details of the target are maintained. Finally, we embed the OPA into a frequency-modulated continuous-wave (FMCW) system to demonstrate the “gaze” function in beam scanning. Experiment results show that the number of precise scanning points can be reduced by 2/3 yet can obtain the reasonable outline of the target. The reconfigurable-aperture OPA (RA-OPA) can be a promising candidate for the applications of rapid recognition, like car navigation and robot vision. Light detection and ranging (LiDAR) serves as one of the key components in the fields of autonomous driving, surveying mapping, and environment detection. Conventionally, dense points clouds are pursued by LiDAR systems to provide high-definition 3D images. However, the LiDAR is typically used to produce abundant yet redundant data for scanning the homogeneous background of scenes, resulting in power waste and excessive processing time. Hence, it is highly desirable for a LiDAR system to “gaze” at the target of interest by dense scanning and rough sparse scans on the uninteresting areas. Here, we propose a LiDAR structure based on an optical phased array (OPA) with reconfigurable apertures to achieve such a gaze scanning function. By virtue of the cascaded optical switch integrated on the OPA chip, a 64-, 128-, 192-, or 256-channel antenna can be selected discretionarily to construct an aperture with variable size. The corresponding divergence angles for the far-field beam are 0.32°, 0.15°, 0.10°, and 0.08°, respectively. The reconfigurable-aperture OPA enables the LiDAR system to perform rough scans via the large beam spots prior to fine scans of the target by using the tiny beam spots. In this way, the OPA-based LiDAR can perform the “gaze” function and achieve full-range scanning efficiently. The scanning time and power consumption can be reduced by 1/4 while precise details of the target are maintained. Finally, we embed the OPA into a frequency-modulated continuous-wave (FMCW) system to demonstrate the “gaze” function in beam scanning. Experiment results show that the number of precise scanning points can be reduced by 2/3 yet can obtain the reasonable outline of the target. The reconfigurable-aperture OPA (RA-OPA) can be a promising candidate for the applications of rapid recognition, like car navigation and robot vision.
Photonics Research
- Publication Date: May. 01, 2024
- Vol. 12, Issue 5, 932 (2024)
Butler matrix enabled multi-beam optical phased array for two-dimensional beam-steering and ranging
Zuoyu Zhou, Weihan Xu, Chuxin Liu, Ruiyang Xu, Chen Zhu, Xinhang Li, Liangjun Lu, Jianping Chen, and Linjie Zhou
Based on the wavelength transparency of the Butler matrix (BM) beamforming network, we demonstrate a multi-beam optical phased array (MOPA) with an emitting aperture composed of grating couplers at a 1.55 μm pitch for wavelength-assisted two-dimensional beam-steering. The device is capable of simultaneous multi-beam operation in a field of view (FOV) of 60° × 8° in the phased-array scanning axis and the wavelength-tuning scanning axis, respectively. The typical beam divergence is about 4° on both axes. Using multiple linearly chirped lasers, multi-beam frequency-modulated continuous wave (FMCW) ranging is realized with an average ranging error of 4 cm. A C-shaped target is imaged for proof-of-concept 2D scanning and ranging. Based on the wavelength transparency of the Butler matrix (BM) beamforming network, we demonstrate a multi-beam optical phased array (MOPA) with an emitting aperture composed of grating couplers at a 1.55 μm pitch for wavelength-assisted two-dimensional beam-steering. The device is capable of simultaneous multi-beam operation in a field of view (FOV) of 60° × 8° in the phased-array scanning axis and the wavelength-tuning scanning axis, respectively. The typical beam divergence is about 4° on both axes. Using multiple linearly chirped lasers, multi-beam frequency-modulated continuous wave (FMCW) ranging is realized with an average ranging error of 4 cm. A C-shaped target is imaged for proof-of-concept 2D scanning and ranging.
Photonics Research
- Publication Date: Apr. 26, 2024
- Vol. 12, Issue 5, 912 (2024)
On-chip integrated few-mode erbium–ytterbium co-doped waveguide amplifiers
Xiwen He, Deyue Ma, Chen Zhou, Mingyue Xiao, Weibiao Chen, and Zhiping Zhou
We propose for the first time, to the best of our knowledge, an on-chip integrated few-mode erbium–ytterbium co-doped waveguide amplifier based on an 800 nm thick Si3N4 platform, which demonstrates high amplification gains and low differential modal gains (DMGs) simultaneously. An eccentric waveguide structure and a co-propagating pumping scheme are adopted to balance the gain of each mode. A hybrid mode/polarization/wavelength-division (de)multiplexer with low insertion loss and crosstalk is used for multiplexing and demultiplexing in two operation wavebands centered at 1550 nm and 980 nm, where the light in these two bands serves as the signal light and pump light of the amplifier, respectively. The results demonstrate that with an input signal power of 0.1 mW, TE0 mode pump power of 300 mW, and TE1 mode pump power of 500 mW, the three signal modes (TE0/TM0/TE1) all exhibit amplification gains exceeding 30 dB, while maintaining a DMG of less than 0.1 dB. We propose for the first time, to the best of our knowledge, an on-chip integrated few-mode erbium–ytterbium co-doped waveguide amplifier based on an 800 nm thick Si3N4 platform, which demonstrates high amplification gains and low differential modal gains (DMGs) simultaneously. An eccentric waveguide structure and a co-propagating pumping scheme are adopted to balance the gain of each mode. A hybrid mode/polarization/wavelength-division (de)multiplexer with low insertion loss and crosstalk is used for multiplexing and demultiplexing in two operation wavebands centered at 1550 nm and 980 nm, where the light in these two bands serves as the signal light and pump light of the amplifier, respectively. The results demonstrate that with an input signal power of 0.1 mW, TE0 mode pump power of 300 mW, and TE1 mode pump power of 500 mW, the three signal modes (TE0/TM0/TE1) all exhibit amplification gains exceeding 30 dB, while maintaining a DMG of less than 0.1 dB.
Photonics Research
- Publication Date: May. 01, 2024
- Vol. 12, Issue 5, 1067 (2024)
Silicon photonic spectrometer with multiple customized wavelength bands|On the Cover
Long Zhang, Xiaolin Yi, Dajian Liu, Shihan Hong, Gaopeng Wang, Hengzhen Cao, Yaocheng Shi, and Daoxin Dai
A silicon photonic spectrometer with multiple customized wavelength bands is developed by introducing multiple channels of wideband optical filters based on multimode waveguide gratings (MWGs) for pre-filtering and the corresponding thermally tunable narrowband filter for high resolution. For these multiple customized wavelength bands, the central wavelengths, bandwidths, and resolutions are designed flexibly as desired, so that the system is simplified and the footprint is minimized for several practical applications (e.g., gas sensing). A customized silicon photonic spectrometer is designed and demonstrated experimentally with four wavelength bands centered around 1310 nm, 1560 nm, 1570 nm, and 1930 nm, which is, to the best of our knowledge, the first on-chip spectrometer available for sensing multiple gas components like HF, CO, H2S, and CO2. The spectral resolutions of the four wavelength bands are 0.11 nm, 0.08 nm, 0.08 nm, and 0.37 nm, respectively. Such a customized silicon photonic spectrometer shows great potential for various applications, including gas monitors, wearable biosensors, and portable spectral-domain optical coherence tomography. A silicon photonic spectrometer with multiple customized wavelength bands is developed by introducing multiple channels of wideband optical filters based on multimode waveguide gratings (MWGs) for pre-filtering and the corresponding thermally tunable narrowband filter for high resolution. For these multiple customized wavelength bands, the central wavelengths, bandwidths, and resolutions are designed flexibly as desired, so that the system is simplified and the footprint is minimized for several practical applications (e.g., gas sensing). A customized silicon photonic spectrometer is designed and demonstrated experimentally with four wavelength bands centered around 1310 nm, 1560 nm, 1570 nm, and 1930 nm, which is, to the best of our knowledge, the first on-chip spectrometer available for sensing multiple gas components like HF, CO, H2S, and CO2. The spectral resolutions of the four wavelength bands are 0.11 nm, 0.08 nm, 0.08 nm, and 0.37 nm, respectively. Such a customized silicon photonic spectrometer shows great potential for various applications, including gas monitors, wearable biosensors, and portable spectral-domain optical coherence tomography.
Photonics Research
- Publication Date: May. 01, 2024
- Vol. 12, Issue 5, 1016 (2024)
High-speed GeSn resonance cavity enhanced photodetectors for a 50 Gbps Si-based 2 μm band communication system|Editors' Pick
Jinlai Cui, Jun Zheng, Yupeng Zhu, Xiangquan Liu, Yiyang Wu, Qinxing Huang, Yazhou Yang, Zhipeng Liu, Zhi Liu, Yuhua Zuo, and Buwen Cheng
Expanding the optical communication band is one of the most effective methods of overcoming the nonlinear Shannon capacity limit of single fiber. In this study, GeSn resonance cavity enhanced (RCE) photodetectors (PDs) with an active layer Sn component of 9%–10.8% were designed and fabricated on an SOI substrate. The GeSn RCE PDs present a responsivity of 0.49 A/W at 2 μm and a 3-dB bandwidth of approximately 40 GHz at 2 μm. Consequently, Si-based 2 μm band optical communication with a transmission rate of 50 Gbps was demonstrated by using a GeSn RCE detector. This work demonstrates the considerable potential of the Si-based 2 μm band photonics in future high-speed and high-capacity optical communication. Expanding the optical communication band is one of the most effective methods of overcoming the nonlinear Shannon capacity limit of single fiber. In this study, GeSn resonance cavity enhanced (RCE) photodetectors (PDs) with an active layer Sn component of 9%–10.8% were designed and fabricated on an SOI substrate. The GeSn RCE PDs present a responsivity of 0.49 A/W at 2 μm and a 3-dB bandwidth of approximately 40 GHz at 2 μm. Consequently, Si-based 2 μm band optical communication with a transmission rate of 50 Gbps was demonstrated by using a GeSn RCE detector. This work demonstrates the considerable potential of the Si-based 2 μm band photonics in future high-speed and high-capacity optical communication.
Photonics Research
- Publication Date: Apr. 01, 2024
- Vol. 12, Issue 4, 767 (2024)
On-chip spiking neural networks based on add-drop ring microresonators and electrically reconfigurable phase-change material photonic switches
Qiang Zhang, Ning Jiang, Yiqun Zhang, Anran Li, Huanhuan Xiong, Gang Hu, Yongsheng Cao, and Kun Qiu
We propose and numerically demonstrate a photonic computing primitive designed for integrated spiking neural networks (SNNs) based on add-drop ring microresonators (ADRMRs) and electrically reconfigurable phase-change material (PCM) photonic switches. In this neuromorphic system, the passive silicon-based ADRMR, equipped with a power-tunable auxiliary light, effectively demonstrates nonlinearity-induced dual neural dynamics encompassing spiking response and synaptic plasticity that can generate single-wavelength optical neural spikes with synaptic weight. By cascading these ADRMRs with different resonant wavelengths, weighted multiple-wavelength spikes can be feasibly output from the ADRMR-based hardware arrays when external wavelength-addressable optical pulses are injected; subsequently, the cumulative power of these weighted output spikes is utilized to ascertain the activation status of the reconfigurable PCM photonic switches. Moreover, the reconfigurable mechanism driving the interconversion of the PCMs between the resonant-bonded crystalline states and the covalent-bonded amorphous states is achieved through precise thermal modulation. Drawing from the thermal properties, an innovative thermodynamic leaky integrate-and-firing (TLIF) neuron system is proposed. With the TLIF neuron system as the fundamental unit, a fully connected SNN is constructed to complete a classic deep learning task: the recognition of handwritten digit patterns. The simulation results reveal that the exemplary SNN can effectively recognize 10 numbers directly in the optical domain by employing the surrogate gradient algorithm. The theoretical verification of our architecture paves a whole new path for integrated photonic SNNs, with the potential to advance the field of neuromorphic photonic systems and enable more efficient spiking information processing. We propose and numerically demonstrate a photonic computing primitive designed for integrated spiking neural networks (SNNs) based on add-drop ring microresonators (ADRMRs) and electrically reconfigurable phase-change material (PCM) photonic switches. In this neuromorphic system, the passive silicon-based ADRMR, equipped with a power-tunable auxiliary light, effectively demonstrates nonlinearity-induced dual neural dynamics encompassing spiking response and synaptic plasticity that can generate single-wavelength optical neural spikes with synaptic weight. By cascading these ADRMRs with different resonant wavelengths, weighted multiple-wavelength spikes can be feasibly output from the ADRMR-based hardware arrays when external wavelength-addressable optical pulses are injected; subsequently, the cumulative power of these weighted output spikes is utilized to ascertain the activation status of the reconfigurable PCM photonic switches. Moreover, the reconfigurable mechanism driving the interconversion of the PCMs between the resonant-bonded crystalline states and the covalent-bonded amorphous states is achieved through precise thermal modulation. Drawing from the thermal properties, an innovative thermodynamic leaky integrate-and-firing (TLIF) neuron system is proposed. With the TLIF neuron system as the fundamental unit, a fully connected SNN is constructed to complete a classic deep learning task: the recognition of handwritten digit patterns. The simulation results reveal that the exemplary SNN can effectively recognize 10 numbers directly in the optical domain by employing the surrogate gradient algorithm. The theoretical verification of our architecture paves a whole new path for integrated photonic SNNs, with the potential to advance the field of neuromorphic photonic systems and enable more efficient spiking information processing.
Photonics Research
- Publication Date: Apr. 01, 2024
- Vol. 12, Issue 4, 755 (2024)
Universal silicon ring resonator for error-free transmission links
Junbo Zhu, Weiwei Zhang, Ke Li, Bharat Pant, Martin Ebert, Xingzhao Yan, Mehdi Banakar, Dehn T. Tran, Callum G. Littlejohns, Fuwan Gan, Graham Reed, and David J. Thomson
We report the design, fabrication, and characterization of a universal silicon PN junction ring resonator for C band error-free communication links operated up to 50 Gb/s with co-designed optical modulation and detection performance. The universal p-n junction ring device shows co-designed detection responsivity up to 0.84 A/W, in conjunction with a modulation efficiency of ∼4 V·mm and >8 dB optical modulation extinction ratio, enabling C band 50 Gb/s NRZ communication link with a bit error rate ≤3×10-12. Individually, the speed of modulation and detection is measured up to 112 Gb/s and 80 Gb/s, respectively. The principle of co-designing the PN junction ring modulator and detector performance required for error-free communication links can significantly ease the fabrication yield challenges of ring structures by reducing the number of types of devices. The principle can also be applied to O band wavelengths. To the best of our knowledge, for the first time, a device of this type has achieved both error-free modulation and detection operation up to 50 Gb/s in the C band individually or in conjugation as an error-free communication link, which paves the way to realize a >1.6 Tb/s all-silicon WDM-based error-free optical transceiver link in the future and is essential for future programmable photonics circuits. We report the design, fabrication, and characterization of a universal silicon PN junction ring resonator for C band error-free communication links operated up to 50 Gb/s with co-designed optical modulation and detection performance. The universal p-n junction ring device shows co-designed detection responsivity up to 0.84 A/W, in conjunction with a modulation efficiency of ∼4 V·mm and >8 dB optical modulation extinction ratio, enabling C band 50 Gb/s NRZ communication link with a bit error rate ≤3×10-12. Individually, the speed of modulation and detection is measured up to 112 Gb/s and 80 Gb/s, respectively. The principle of co-designing the PN junction ring modulator and detector performance required for error-free communication links can significantly ease the fabrication yield challenges of ring structures by reducing the number of types of devices. The principle can also be applied to O band wavelengths. To the best of our knowledge, for the first time, a device of this type has achieved both error-free modulation and detection operation up to 50 Gb/s in the C band individually or in conjugation as an error-free communication link, which paves the way to realize a >1.6 Tb/s all-silicon WDM-based error-free optical transceiver link in the future and is essential for future programmable photonics circuits.
Photonics Research
- Publication Date: Mar. 21, 2024
- Vol. 12, Issue 4, 701 (2024)
Ultracompact silicon on-chip polarization controller|On the Cover
Weike Zhao, Yingying Peng, Mingyu Zhu, Ruoran Liu, Xiaolong Hu, Yaocheng Shi, and Daoxin Dai
On-chip polarization controllers are extremely important for various optical systems. In this paper, a compact and robust silicon-based on-chip polarization controller is proposed and demonstrated by integrating a special polarization converter and phase shifters. The special polarization converter consists of a 1×1 Mach–Zehnder interferometer with two polarization-dependent mode converters at the input/output ends. When light with an arbitrary state of polarization (SOP) is launched into the chip, the TE0 and TM0 modes are simultaneously excited. The polarization extinction ratio (PER) and the phase difference for the TE0/TM0 modes are tuned by controlling the first phase shifter, the polarization converter, and the second phase shifter. As a result, one can reconstruct the light SOP at the output port. The fabricated polarization controller, as compact as ∼150 μm×700 μm, exhibits an excess loss of less than 1 dB and a record PER range of >54 dB for arbitrary input light beams in the wavelength range of 1530–1620 nm. On-chip polarization controllers are extremely important for various optical systems. In this paper, a compact and robust silicon-based on-chip polarization controller is proposed and demonstrated by integrating a special polarization converter and phase shifters. The special polarization converter consists of a 1×1 Mach–Zehnder interferometer with two polarization-dependent mode converters at the input/output ends. When light with an arbitrary state of polarization (SOP) is launched into the chip, the TE0 and TM0 modes are simultaneously excited. The polarization extinction ratio (PER) and the phase difference for the TE0/TM0 modes are tuned by controlling the first phase shifter, the polarization converter, and the second phase shifter. As a result, one can reconstruct the light SOP at the output port. The fabricated polarization controller, as compact as ∼150 μm×700 μm, exhibits an excess loss of less than 1 dB and a record PER range of >54 dB for arbitrary input light beams in the wavelength range of 1530–1620 nm.
Photonics Research
- Publication Date: Jan. 05, 2024
- Vol. 12, Issue 2, 183 (2024)
High-speed silicon photonic electro-optic Kerr modulation
Jonathan Peltier, Weiwei Zhang, Leopold Virot, Christian Lafforgue, Lucas Deniel, Delphine Marris-Morini, Guy Aubin, Farah Amar, Denh Tran, Xingzhao Yan, Callum G. Littlejohns, Carlos Alonso-Ramos, Ke Li, David J. Thomson, Graham Reed, and Laurent Vivien
Silicon-based electro-optic modulators contribute to easing the integration of high-speed and low-power consumption circuits for classical optical communications and data computations. Beyond the plasma dispersion modulation, an alternative solution in silicon is to exploit the DC Kerr effect, which generates an equivalent linear electro-optical effect enabled by applying a large DC electric field. Although some theoretical and experimental studies have shown its existence in silicon, limited contributions relative to plasma dispersion have been achieved in high-speed modulation so far. This paper presents high-speed optical modulation based on the DC Kerr effect in silicon PIN waveguides. The contributions of both plasma dispersion and Kerr effects have been analyzed in different waveguide configurations, and we demonstrated that the Kerr induced modulation is dominant when a high external DC electric field is applied in PIN waveguides. High-speed optical modulation response is analyzed, and eye diagrams up to 80 Gbit/s in NRZ format are obtained under a d.c. voltage of 30 V. This work paves the way to exploit the Kerr effect to generate high-speed Pockels-like optical modulation. Silicon-based electro-optic modulators contribute to easing the integration of high-speed and low-power consumption circuits for classical optical communications and data computations. Beyond the plasma dispersion modulation, an alternative solution in silicon is to exploit the DC Kerr effect, which generates an equivalent linear electro-optical effect enabled by applying a large DC electric field. Although some theoretical and experimental studies have shown its existence in silicon, limited contributions relative to plasma dispersion have been achieved in high-speed modulation so far. This paper presents high-speed optical modulation based on the DC Kerr effect in silicon PIN waveguides. The contributions of both plasma dispersion and Kerr effects have been analyzed in different waveguide configurations, and we demonstrated that the Kerr induced modulation is dominant when a high external DC electric field is applied in PIN waveguides. High-speed optical modulation response is analyzed, and eye diagrams up to 80 Gbit/s in NRZ format are obtained under a d.c. voltage of 30 V. This work paves the way to exploit the Kerr effect to generate high-speed Pockels-like optical modulation.
Photonics Research
- Publication Date: Dec. 14, 2023
- Vol. 12, Issue 1, 51 (2024)
Topics
© Copyright 2018-2021 | Chinese Laser Press. All Rights Reserved 沪ICP备15018463号-20